| PART |
Description |
Maker |
| NE5520379A-T1A-A NE5520379A |
NECS 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Labs
|
| UPG2214TB-E4-A |
50 MHz - 3000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.65 dB INSERTION LOSS
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
NECs W LOW VOLTAGE L/ S-BAND SPDT SWITCH
NECs ?W LOW VOLTAGE L, S-BAND SPDT SWITCH
|
NEC Corp.
|
| NE46134 NE46134-T1 NE46100 |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| UPG2227T5F-A UPG2227T5F-E2-A |
NECs L-BAND SP3T SWITCH
|
Duracell
California Eastern Laboratories
|
| NE722S01 NE722S01-T NE722S01-T1B1 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
Duracell
NEC Corp.
NEC[NEC]
|
| UPG2027TQ UPG2027TQ-E1-A |
NECs L-BAND 4W HIGH POWER SPDT SWITCH IC
|
NEC Corp.
|
| NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Labs
|
| UPG2024TQ-E1-A |
NECs GaAs MMIC DPDT SWITCHES FOR 5 GHz BAND WIRELESS LAN
|
California Eastern Laboratories
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| AWT6108 AWT6108M10P8 |
This quad band power amplifier module is designed to support dual, tri and quad band applications.
Power Amplifiers
Quad Band Power Amplifier Module 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Anadigics Inc
ANADIGICS, Inc.
|
| 5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
